Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
SILICON POWER MOS FET
NE5511279A
7.5 V OPERATION SILICON RF POWER LD-MOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
Document No. PU10322EJ01V0DS (1st edition)
Date Published June 2003 CP(K)
DESCRIPTION
The NE5511279A is an N-channel silicon power laterally
diffused MOS
FET specially designed as the
transmission
power amplifier for 7.5 V Radio Systems. Dies are manufactured
using our
NEWMOS1
technology
and housed in a surface mount
package.
This device can deliver 40.0
dBm output power with
48% power added
efficiency at 900
MHz under the 7.5 V
supply voltage.
FEATURES
?
High output power
: Pout
= 40.0 dBm TYP. (f = 900 MHz, VDS
= 7.5 V, Pin
= 27 dBm, IDset
= 400 mA)
: Pout
= 40.5 dBm TYP.
(f = 460 MHz, VDS
= 7.5 V, Pin
= 25 dBm, IDset
= 400 mA)
?
High power added efficiency
: ?add
= 48% TYP. (f = 900 MHz, VDS
= 7.5 V, Pin
= 27 dBm, IDset
= 400 mA)
: ?add
= 50% TYP. (f = 460 MHz, VDS
= 7.5 V, Pin
= 25 dBm, IDset
= 400 mA)
?
High linear gain
: GL
= 15.0 dB TYP. (f = 900 MHz, VDS
= 7.5 , Pin
= 5 dBm V, IDset
= 400 mA)
: GL
= 18.5 dB TYP. (f = 460 MHz, VDS
= 7.5 V, Pin
= 5 dBm, IDset
= 400 mA)
?
Surface mount package
: 5.7 ?
5.7 ?
1.1 mm MAX.
?
Single supply
: VDS
= 2.8 to 8.0 V
APPLICATIONS
?
460 MHz Radio Systems
?
900 MHz Radio Systems
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
NE5511279A-T1
79A
W3
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 1 kpcs/reel
NE5511279A-T1A
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 5 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5511279A-A
相关PDF资料
NE5520379A-A MOSFET LD N-CHAN 3.2V 79A
NE552R479A-A MOSFET LD N-CHAN 3V 79A
NE5531079A-A FET RF LDMOS 460MHZ 30V 79A
NE55410GR-AZ MOSFET LD N-CHAN 28V 16-HTSSOP
NE650103M-A MESFET GAAS 2.7GHZ 3M
NHD-0108BZ-FSY-YBW-3V3 LCD MOD CHAR 1X8 Y/G TRANSFL
NHD-0108BZ-RN-GBW LCD MOD CHAR 1X8 NO REFL
NHD-0108BZ-RN-YBW-33V LCD MOD CHAR 1X8 Y/G REFL STN
相关代理商/技术参数
NE5511279A-T1 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R
NE5511279A-T1A 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R 制造商:California Eastern Laboratories 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R
NE5511279A-T1-A 功能描述:射频MOSFET电源晶体管 UHF Band RF Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
NE5511279A-T1A-A 制造商:CEL 制造商全称:CEL 功能描述:7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NE5512 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual high-performance operational amplifier
NE5512D 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual high-performance operational amplifier
NE5512N 制造商:NXP Semiconductors 功能描述:Operational Amplifier, Dual AMP, Bipolar, 8 Pin, Plastic, DIP
NE5514 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Quad high-performance operational amplifier